Electronic transmission in the lateral heterostructure of semiconducting and metallic transition-metal dichalcogenide monolayers
| Autor: | Tetsuro Habe |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics General Physics and Astronomy Conductance FOS: Physical sciences Heterojunction 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Transition metal dichalcogenide monolayers Condensed Matter::Materials Science Zigzag 0103 physical sciences Monolayer Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Condensed Matter::Strongly Correlated Electrons 0210 nano-technology Electronic band structure Spin-½ |
| Popis: | We investigate the electronic transport property of lateral heterojunctions of semiconducting and metallic transition-metal dichalcogenide monolayers, MoSe$_2$ and NbSe$_2$, respectively. We calculate the electronic transmission probability by using a multi-orbital tight-binding model based on the first-principles band structure. The transmission probability depends on the spin and valley degrees of freedom. This dependence qualitatively changes by the interface structure. The heterostructure with a zig-zag interface preserves the spin and the valley of electron in the transmission process. On the other hand, the armchair interface enables conduction electrons to transmit with changing the valley and increases the conductance in hole-doped junctions due to the valley-flip transmission. We also discuss the spin and valley polarizations of electronic current in the heterojunctions. 8 pages, 10 figures |
| Databáze: | OpenAIRE |
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