Serendipitous SEU hardening of resistive load SRAMs

Autor:	J.F. Kirshman, R. Koga, K.B. Crawford, S.D. Pinkerton, W.R. Crain, S.J. Hansel
Rok vydání:	1996
Předmět:	Physics Nuclear and High Energy Physics Nuclear Energy and Engineering Hardening (metallurgy) Resistive load Electronic engineering Bit error rate Electrical and Electronic Engineering Radiation hardening Upset Semiconductor storage devices Computational physics
Zdroj:	IEEE Transactions on Nuclear Science. 43:931-935
ISSN:	1558-1578 0018-9499
Popis:	High and low resistive load versions of Micron Technology's MT5C1008C (128K/spl times/8) and MT5C2561C (256K/spl times/1) SRAMs were tested for SEU vulnerability. Contrary to computer simulation results, SEU susceptibility decreased with increasing resistive load. A substantially larger number of multiple-bit errors was observed for the low resistive load SRAMs, which also exhibited a "1"/spl rarr/"0" to "0"/spl rarr/"1" bit error ratio close to unity; in contrast, the high resistive load devices displayed a pronounced error bit polarity effect. Two distinct upset mechanisms are proposed to account for these observations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74dbd484f5ec1321ec9c521f5d6a1b62 https://doi.org/10.1109/23.510736 Zobrazit plný text záznamu