Serendipitous SEU hardening of resistive load SRAMs
Autor: | J.F. Kirshman, R. Koga, K.B. Crawford, S.D. Pinkerton, W.R. Crain, S.J. Hansel |
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Rok vydání: | 1996 |
Předmět: | |
Zdroj: | IEEE Transactions on Nuclear Science. 43:931-935 |
ISSN: | 1558-1578 0018-9499 |
Popis: | High and low resistive load versions of Micron Technology's MT5C1008C (128K/spl times/8) and MT5C2561C (256K/spl times/1) SRAMs were tested for SEU vulnerability. Contrary to computer simulation results, SEU susceptibility decreased with increasing resistive load. A substantially larger number of multiple-bit errors was observed for the low resistive load SRAMs, which also exhibited a "1"/spl rarr/"0" to "0"/spl rarr/"1" bit error ratio close to unity; in contrast, the high resistive load devices displayed a pronounced error bit polarity effect. Two distinct upset mechanisms are proposed to account for these observations. |
Databáze: | OpenAIRE |
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