A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories
| Autor: | Christian Acal, Juan Eloy Ruiz-Castro, Juan Bautista Roldán, Ana M. Aguilera |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
phase-type distributions
Markov processes RRAM random telegraph noise statistics Computer science General Mathematics Markov process Random telegraph noise 02 engineering and technology 01 natural sciences Noise (electronics) symbols.namesake Phase-type distributions 0103 physical sciences Computer Science (miscellaneous) Limit (mathematics) Statistical physics Engineering (miscellaneous) 010302 applied physics Resistive touchscreen Stationary distribution Laplace transform Stochastic process lcsh:Mathematics Statistics 021001 nanoscience & nanotechnology lcsh:QA1-939 Resistive random-access memory symbols 0210 nano-technology |
| Zdroj: | Digibug. Repositorio Institucional de la Universidad de Granada Consejo Superior de Investigaciones Científicas (CSIC) Mathematics, Vol 9, Iss 390, p 390 (2021) Digibug: Repositorio Institucional de la Universidad de Granada Universidad de Granada (UGR) Mathematics; Volume 9; Issue 4; Pages: 390 |
| Popis: | A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time. The stationary distribution was calculated through matrix-algorithmic methods and multiple interesting measures were worked out. The number of visits distribution to a determine macro-state were analyzed from the respective differential equations and the Laplace transform. The mean number of visits to a macro-state between any two times was given. The results were implemented computationally and were successfully applied to study random telegraph noise (RTN) in resistive memories. RTN is an important concern in resistive random access memory (RRAM) operation. On one hand, it could limit some of the technological applications of these devices; on the other hand, RTN can be used for the physical characterization. Therefore, an in-depth statistical analysis to model the behavior of these devices is of essential importance. Spanish Ministry of Science, Innovation and Universities (FEDER program) MTM2017-88708-P TEC2017-84321-C4-3-R Government of Andalusia (Spain) FQM-307 Andalusian Ministry of Economy, Knowledge, Companies and Universities A-TIC-117-UGR18 FPU18/01779 |
| Databáze: | OpenAIRE |
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