Adapted method for monitoring functional failures in NOR FLASH-memory during tests for resistance to heavy charged particles
| Autor: | Sergey B. Shmakov, I. I. Shvetsov-Shilovskiy, Roman I. Gvozdev |
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| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Bezopasnostʹ Informacionnyh Tehnologij, Vol 27, Iss 3, Pp 66-75 (2020) |
| ISSN: | 2074-7136 2074-7128 |
| DOI: | 10.26583/bit.2020.3.06 |
| Popis: | This study offers an adapted method for monitoring functional failures in NOR flash memory during tests for resistance to heavy charged particles. The experiment was conducted on the basis of the "U-400" cyclotron. Experimental results of approbation of the adapted method have shown the need to divide functional failures (FF) into 5 types depending on the nature of each FF and confirm the need to adapt the methodology and monitoring tools to assess the parameters of sensitivity to the effects of heavy charged particles (HCP) on single radiation effects (SRE) of the FF. The obtained results provide additional data on the parameters of the sensitivity of chips to the effects of HCP on the SRE to the equipment manufacturer for the development of a system for parrying the observed effects in the equipment in order to increase the security of stored information. |
| Databáze: | OpenAIRE |
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