Origin of the blueshift of photoluminescence in a type-II heterostructure
| Autor: | Hirotaka Sasakura, Hidekazu Kumano, Mitsuru Sato, Ikuo Suemune, Souta Miyamura, Masafumi Jo |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
GaSb
Photoluminescence Materials science Exciton Nanotechnology 71.35.-y: Excitons Power law type-II Materials Science(all) General Materials Science Quantum well 81.15.Hi: Molecular beam epitaxy Condensed matter physics Nano Express GaAs 78.55.Cr: Photoluminescence of III-V semiconductor Heterojunction Rate equation Condensed Matter Physics Blueshift Excitons Excitation |
| Zdroj: | Nanoscale Research Letters |
| ISSN: | 1556-276X |
| Popis: | Blueshifts of luminescence observed in type-II heterostructures are quantitatively examined in terms of a self-consistent approach including excitonic effects. This analysis shows that the main contribution to the blueshift originates from the well region rather than the variation of triangular potentials formed in the barrier region. The power law for the blueshift, ΔEPL ∝ Plaserm, from m = 1/2 for lower excitation Plaser to m = 1/4 for higher excitation, is obtained from the calculated results combined with a rate equation analysis, which also covers the previously believed m = 1/3 power law within a limited excitation range. The present power law is consistent with the blueshift observed in a GaAsSb/GaAs quantum well. |
| Databáze: | OpenAIRE |
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