Critical cluster size of InAs quantum dots formed by Stranski–Krastanow mode

Autor: Tomohiko Itoh, Shunichi Muto, Ken-ichi Shiramine
Rok vydání: 2004
Předmět:
Zdroj: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:642
ISSN: 0734-211X
DOI: 10.1116/1.1651113
Popis: The number of In atoms in a critical cluster, i*, in Stranski-Krastanow (S-K) mode of InAs islands was determined to be 1-10. The i* was determined using an activation energy EA of 2.0 eV determined from an Arrhenius plot of the saturated density of InAs islands formed on a GaAs (001) surface by S-K mode of molecular beam epitaxy [K. Shiramine et al., J. Cryst. Growth 242, 332 (2002)], and an activation energy of 1.6 eV for migration (surface diffusion) of In adatoms, inferred from other references. The common value ~2.0 eV of EA in S-K mode was ascribed to the small i*.
Databáze: OpenAIRE
načítá se...