Critical cluster size of InAs quantum dots formed by Stranski–Krastanow mode
Autor: | Tomohiko Itoh, Shunichi Muto, Ken-ichi Shiramine |
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Rok vydání: | 2004 |
Předmět: | |
Zdroj: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:642 |
ISSN: | 0734-211X |
DOI: | 10.1116/1.1651113 |
Popis: | The number of In atoms in a critical cluster, i*, in Stranski-Krastanow (S-K) mode of InAs islands was determined to be 1-10. The i* was determined using an activation energy EA of 2.0 eV determined from an Arrhenius plot of the saturated density of InAs islands formed on a GaAs (001) surface by S-K mode of molecular beam epitaxy [K. Shiramine et al., J. Cryst. Growth 242, 332 (2002)], and an activation energy of 1.6 eV for migration (surface diffusion) of In adatoms, inferred from other references. The common value ~2.0 eV of EA in S-K mode was ascribed to the small i*. |
Databáze: | OpenAIRE |
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