Stoichiometry determination of VOx thin films by O-18-RBS spectrometry
| Autor: | S. Vongtragool, A.D. Rata, T Hibma, D.O Boerma |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
Reflection high-energy electron diffraction
Chemistry Metals and Alloys Analytical chemistry epitaxy Monoxide Surfaces and Interfaces Substrate (electronics) Rutherford backscattering spectrometry Epitaxy Vanadium oxide MBE-UHV Surfaces Coatings and Films Electronic Optical and Magnetic Materials stoichiometry vanadium oxide Materials Chemistry Thin film Stoichiometry RBS |
| Zdroj: | Thin Solid Films, 400(1-2), 120-124. Elsevier Science |
| Popis: | This paper reports on the stoichiometry determination of epitaxially grown vanadium monoxide (VOx) thin films on MgO(100) substrates. The epitaxial growth was confirmed by RHEED, LEED and XRD techniques. The oxygen content of VOx thin films, as a function of oxygen flux, was determined using Rutherford backscattering spectrometry. The 18O isotope was used for film growth, in order to distinguish between the oxygen of film and substrate. The upper and lower stoichiometry limit found are consistent with the ones known for bulk material. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|