Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices
| Autor: | Francesca Campabadal, Rosana Rodriguez, M.C. Acero, Javier Martin-Martinez, Montserrat Nafria, Xavier Aymerich, Mireia Bargallo Gonzalez |
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| Přispěvatelé: | Ministerio de Economía y Competitividad (España), Generalitat de Catalunya |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Instrumentation RTN Random telegraph noise Noise (electronics) Resistive random access memory (RRAM) RRAM Data acquisition Time domain Electrical and Electronic Engineering Variability HfO2 Resistive touchscreen Ni business.industry Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resistive random-access memory Random telegraph noise (RTN) Optoelectronics Resistive random access memory State (computer science) business Voltage Conductive filament |
| Zdroj: | Recercat. Dipósit de la Recerca de Catalunya instname Recercat: Dipósit de la Recerca de Catalunya Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona Digital.CSIC. Repositorio Institucional del CSIC |
| Popis: | Trabajo presentado en la 19th Conference on Insulating Films on Semiconductors 2015, celebrado en Udine (Italia), del 29 de junio al 2 de julio de 2015 In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. After data acquisition, the advanced Weighted Time Lag (WTL) method is employed to accurately identify the contribution of multiple electrically active defects in multilevel RTN signals. Finally, the internal dynamics of trapping and de-trapping processes through the defects close to the filamentary path and its dependence on voltage and time are analyzed. The support of the Spanish Ministry of Economy and Competitiveness under Projects TEC2011-27292-C02-02 (IMB-CNM) and TEC2013-45638-C3-1-R (UAB) is acknowledged. UAB authors also thank the support of the Generalitat de Catalunya under Project 2014 SGR-384. |
| Databáze: | OpenAIRE |
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