Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence

Autor: Marko Erich, Marko Gloginjić, Željko Mravik, Branislav Vrban, Štefan Čerba, Jakub Lüley, Vladimír Nečas, Vendula Filová, Karel Katovský, Ondrej Štastný, Srdjan Petrović
Rok vydání: 2023
Zdroj: 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22-24; Strbske Pleso, Slovak Republic
Popis: 6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.
Databáze: OpenAIRE