Gate-Controlled Surface Conduction in Na-Doped Bi2Te3 Topological Insulator Nanoplates
| Autor: | Faxian Xiu, Yong Wang, Jianshi Tang, Zhigang Chen, Jin Zou, Murong Lang, Xinxin Yu, Xiaowei Jiang, Liang He, Kang L. Wang, Lina Cheng, Xufeng Kou |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Nanostructure Surface Properties Bioengineering chemistry.chemical_compound Materials Testing General Materials Science Bismuth telluride Particle Size Surface states Condensed matter physics Spintronics business.industry Mechanical Engineering Sodium Doping Electric Conductivity Membranes Artificial General Chemistry Condensed Matter Physics Nanostructures Semiconductor Semiconductors chemistry Topological insulator Field-effect transistor Tellurium business Bismuth |
| Zdroj: | Nano Letters. 12:1170-1175 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl202920p |
| Popis: | Exploring exciting and exotic physics, scientists are pursuing practical device applications for topological insulators. The Dirac-like surface states in topological insulators are protected by the time-reversal symmetry, which naturally forbids backscattering events during the carrier transport process, and therefore offers promising applications in dissipationless spintronic devices. Although considerable efforts have been devoted to controlling their surface conduction, limited work has been focused on tuning surface states and bulk carriers in Bi(2)Te(3) nanostructures by external field. Here we report gate-tunable surface conduction in Na-doped Bi(2)Te(3) topological insulator nanoplates. Significantly, by applying external gate voltages, such topological insulators can be tuned from p-type to n-type. Our results render a promise in finding novel topological insulators with enhanced surface states. |
| Databáze: | OpenAIRE |
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