Recent developments in graphene based field effect transistors
| Autor: | S. Ravi, B. Vamsi Krsihna, M. Durga Prakash |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Electron mobility
Materials science Fabrication 02 engineering and technology Integrated circuit Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Article Modelling law.invention law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electronic circuit 010302 applied physics Very-large-scale integration Graphene based FET RF circuits Graphene business.industry GFET Transistor 021001 nanoscience & nanotechnology Optoelectronics Field-effect transistor 0210 nano-technology business Bio-sensors High speed analog circuits |
| Zdroj: | Materials Today. Proceedings |
| ISSN: | 2214-7853 |
| Popis: | This paper presents a comprehensive survey on the recent developments in Graphene Field Effect Transistor (G-FET), considering various aspects such as fabrication, modelling and simulation tools and applications especially in sensors, highlighting the future directions. Complying with the Moore's law, to increase the transistor density of an Integrated Circuit, new alternate materials for fabrication have been tried, instead of silicon due to its limitations in reducing transistor dimensions. Graphene, one such material, proves to be a suitable alternate for silicon due to the factors like superior carrier mobility and very high trans-conductance gain, etc and G-FET is becoming the most suitable choice for high-speed analog VLSI, RF, and bio- sensor circuits. |
| Databáze: | OpenAIRE |
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