XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
| Autor: | L N Dvoretckaia, R. G. Burkovsky, Ivan Mukhin, Olga Yu. Koval, Igor E. Eliseev, Sergey V. Fedina, Vladimir V. Fedorov, G. A. Sapunov, Alexey D. Bolshakov, Demid A. Kirilenko, Stanislav A. Udovenko |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Band gap XRD General Chemical Engineering Nanowire GaP molecular-beam epitaxy 02 engineering and technology Substrate (electronics) 01 natural sciences Article lcsh:Chemistry zincblende Phase (matter) 0103 physical sciences General Materials Science Wurtzite crystal structure 010302 applied physics business.industry Rietveld refinement 021001 nanoscience & nanotechnology Reciprocal lattice Semiconductor lcsh:QD1-999 wurtzite nanowire TEM Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Nanomaterials Nanomaterials, Vol 11, Iss 960, p 960 (2021) Volume 11 Issue 4 |
| ISSN: | 2079-4991 |
| Popis: | Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high concentration of wurtzite phase by molecular beam epitaxy on Si (111) and investigate their crystallinity. Varying the growth temperature and V/III flux ratio, we obtained wurtzite polytype segments with thicknesses in the range from several tens to 500 nm, which demonstrates the high potential of the phase bandgap engineering with highly crystalline self-catalyzed phosphide nanowires. The formation of rotational twins and wurtzite polymorph in vertical nanowires was observed through complex approach based on transmission electron microscopy, powder X-ray diffraction, and reciprocal space mapping. The phase composition, volume fraction of the crystalline phases, and wurtzite GaP lattice parameters were analyzed for the nanowires detached from the substrate. It is shown that the wurtzite phase formation occurs only in the vertically-oriented nanowires during vapor-liquid-solid growth, while the wurtzite phase is absent in GaP islands parasitically grown via the vapor-solid mechanism. The proposed approach can be used for the quantitative evaluation of the mean volume fraction of polytypic phase segments in heterostructured nanowires that are highly desirable for the optimization of growth technologies. |
| Databáze: | OpenAIRE |
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