A Bidirectional Communicating Power Supply Circuit for Smart Gate Driver Boards
| Autor: | Julien Weckbrodt, Christophe Batard, Nicolas Ginot, Thanh Long Le, Stephane Azzopardi |
|---|---|
| Přispěvatelé: | Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), SAFRAN Group, Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2020 |
| Předmět: |
[SPI.OTHER]Engineering Sciences [physics]/Other
driver circuits Computer science Communication channel Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Electromagnetic interference law.invention power system monitoring chemistry.chemical_compound Parasitic capacitance law MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Gate driver Silicon carbide SiC MOSFET electrical isolation Electrical and Electronic Engineering Power MOSFET Transformer business.industry 020208 electrical & electronic engineering Electrical engineering isolated power supply Semiconductor device [SPI.TRON]Engineering Sciences [physics]/Electronics Electric power transmission chemistry Logic gate Field-effect transistor business Galvanic isolation Voltage |
| Zdroj: | IEEE Transactions on Power Electronics IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2020, 35 (8), pp.8540-8549. ⟨10.1109/TPEL.2019.2960632⟩ IEEE Transactions on Power Electronics, 2020, 35 (8), pp.8540-8549. ⟨10.1109/TPEL.2019.2960632⟩ |
| ISSN: | 1941-0107 0885-8993 |
| Popis: | In power circuits, the gate drivers are required to provide an optimal and safe switching of power semiconductor devices. Nowadays, the gate driver boards include more and more features, such as short-circuit detection, soft-shutdown, temperature sensing, on -state voltage monitoring. Research works are in progress on the integration of on-line monitoring features for a predictive maintenance. The instrumentation of the gate drive system supposes the integration of a communication system to transmit the monitoring data. In high-power designs, a galvanic isolation is mandatory on the gate driver board. The parasitic capacitance seen on the isolation barrier is critical in these designs as it can lead to the circulation of common mode currents during the switching. Adding extra optocouplers or transformers on the isolation barrier is, therefore, risky due to electromagnetic interference constraints. In this article, a new bidirectional data transmission method is proposed for gate drivers used for driving 1.2 kV silicon carbide (SiC) power metal oxide semiconductor field effect transistors ( mosfet s). The proposed method enables the energy transmission and a bidirectional data exchange on a single power supply transformer. The experimental results are provided demonstrating 1 Mb/s for TxD and 16 kb/s for RxD. The targeted application is the health monitoring of SiC power mosfet s using the gate driver board. |
| Databáze: | OpenAIRE |
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