Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells
| Autor: | L. Worschech, S. Schmid, Fabian Hartmann, Martin Kamp, Sven Höfling, P. Pfeffer, Gérald Bastard, E. Batke, Georg Knebl |
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| Přispěvatelé: | University of St Andrews. School of Physics and Astronomy, University of St Andrews. Condensed Matter Physics |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Condensed Matter::Other Photoconductivity NDAS Heterojunction 02 engineering and technology Electron 021001 nanoscience & nanotechnology Topology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Condensed Matter::Materials Science QC Physics Topological insulator 0103 physical sciences Antimonide Charge carrier 010306 general physics 0210 nano-technology Electronic band structure Quantum well QC |
| Popis: | The work was supported by the DFG (project Ka2318/5-1) and the Elite Network of Bavaria within the graduate program “Topological Insulators”. We study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its type-II broken band alignment and inverted band structure. Under constant optical excitation, the majority charge carrier type switches from electron to hole. Within the majority charge carrier type transition, the coexisting minority charge carrier contribution indicates electron-hole hybridization with a non-trivial topological insulating phase. The optical tuning is attributed to the negative photoconductivity of antimonide materials in combination with a persistent charge carrier build-up of photo generated charges at the surface and substrate side of the device, respectively. Our study of the tuning of an InAs/GaSb double quantum well heterostructure reveals that an electro-optical switching is possible and paves the way to an optical control of the phase diagram of InAs/GaSb topological insulators. Publisher PDF |
| Databáze: | OpenAIRE |
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