Uncovering the Structural Evolution of Arsenene on SiC Substrate

Autor:	Anderson K. Okazaki, Rafael Furlan de Oliveira, Rafael Luiz Heleno Freire, Adalberto Fazzio, Felipe Crasto de Lima
Rok vydání:	2023
Předmět:	Condensed Matter - Materials Science General Energy Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Physical and Theoretical Chemistry Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	The Journal of Physical Chemistry C. 127:7894-7899
ISSN:	1932-7455 1932-7447
DOI:	10.1021/acs.jpcc.3c00938
Popis:	Two-dimensional arsenic allotropes have been grown on metallic surfaces, while topological properties have been theoretically described on strained structures. Here we experimentally grow arsenene by molecular beam epitaxy over the insulating SiC substrate. The arsenene presents a flat structure with a strain field that follows the SiC surface periodicity. Our ab initio simulations, based on the density functional theory, corroborate the experimental observation. The strained structure presents a new arsenene allotrope with a triangular structure, rather than the honeycomb previously predicted for other pnictogens. This strained structure presents a Peierls-like transition leading to an indirect gap semiconducting behavior.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65ceffe686f8874e64e65974fd42b6f4 https://doi.org/10.1021/acs.jpcc.3c00938 Zobrazit plný text záznamu