Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
| Autor: | Jung-Joon Ahn, Min-Seok Kang, Kyoung-Sook Moon, Sang-Mo Koo |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Nano Express Metal work function Nanoparticle Nanochemistry Nanotechnology Condensed Matter Physics Electrical contacts Metal chemistry.chemical_compound Materials Science(all) Depletion region chemistry visual_art visual_art.visual_art_medium Silicon carbide General Materials Science Composite material Diode |
| Zdroj: | Nanoscale Research Letters NANOSCALE RESEARCH LETTERS(7) |
| ISSN: | 1556-276X |
| DOI: | 10.1186/1556-276x-7-75 |
| Popis: | Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively. The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations. |
| Databáze: | OpenAIRE |
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