Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing

Autor: Ji-Hoon Ahn, Esther Lee, Jee Hoon Kim, Jaeun Kim, Seung Won Lee, Tae Gun Jeong, Tae Hyeon Kim, Byung Jin Cho
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Nano Convergence, Vol 6, Iss 1, Pp 1-8 (2019)
Nano Convergence
ISSN: 2196-5404
Popis: We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al2O3 bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variation, on/off ratio, subthreshold swing, and mobility compared to the non-annealed reference device. Capacitance–voltage measurement confirmed that annealing can lead to enhanced capacitance properties due to reduced charge trapping. Depth profile analysis using X-ray photoelectron spectroscopy proved that percentage of both the oxygen vacancy (VO) and the hydroxyl groups (M–OH) within the IGZO/Al2O3 layers, which serve as a charge trapping source, can be substantially reduced by annealing the fabricated transistor device. Furthermore, the undesired degradation of the contact interface between source/drain electrode and the channel, which mainly concerns VO, can be largely prevented by post-annealing. Thus, the facile annealing process also improves the electrical bias stress stability. This simple post annealing approach provides a strategy for realising better performance and reliability of the solid sol–gel oxide transistor. Electronic supplementary material The online version of this article (10.1186/s40580-019-0194-1) contains supplementary material, which is available to authorized users.
Databáze: OpenAIRE
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