Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs
| Autor: | Francois Andrieu, Olivier Faynot, Christoforos G. Theodorou, Charalabos A. Dimitriadis, Thierry Poiroux, E. G. Ioannidis, Gerard Ghibaudo |
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| Přispěvatelé: | Aristotle University of Thessaloniki, Department of Physics, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), HERACLEITUS II, Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon Infrasound ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FDSOI MOSFETs) Silicon on insulator chemistry.chemical_element 02 engineering and technology 01 natural sciences Generation-recombination (g-r) noise 0103 physical sciences MOSFET Flicker noise Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010302 applied physics Thin layers business.industry Flicker low-frequency noise (LFN) 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials chemistry Optoelectronics 0210 nano-technology business Noise (radio) |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1161-1167. ⟨10.1109/TED.2014.2307201⟩ IEEE Transactions on Electron Devices, 2014, 61 (4), pp.1161-1167. ⟨10.1109/TED.2014.2307201⟩ |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/TED.2014.2307201⟩ |
| Popis: | International audience; The low-frequency noise (LFN) sources in ultrathin body (8.7 nm) and buried oxide (10 nm) fully depleted silicon-on-insulator (UTBB FD-SOI) n- and p-channel MOSFETs are analyzed. Both flicker and Lorentzian-type noise were observed, showing a dependence on the channel dimensions and the front/back gate bias conditions. The flicker noise component can be described by the carrier number with correlated mobility fluctuations model considering contribution from both interfaces. The Lorentzian-type noise originates mainly from generation-recombination (g-r) traps in the Si film, uniformly distributed in thin layers next to the drain and source contacts, and in some cases from g-r traps located at the front Si/oxide interface. No different noise behavior was observed between n- and p-channel devices operating in front-gate mode. Finally, LFN comparison between FD-SOI devices of different technologies is presented for the first time, demonstrating the impact of the UTBB technology on the LFN properties. |
| Databáze: | OpenAIRE |
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