Silicon Nitride Nanopores Formed by Simple Chemical Etching: DNA Translocations and TEM Imaging

Autor:	Zehui Xia, Andre Scott, Rachael Keneipp, Joshua Chen, David J. Niedzwiecki, Brian DiPaolo, Marija Drndić
Rok vydání:	2022
Předmět:	Ions Nanopores Microscopy Electron Transmission Silicon Compounds General Engineering General Physics and Astronomy General Materials Science DNA
Zdroj:	ACS Nano. 16:18648-18657
ISSN:	1936-086X 1936-0851
DOI:	10.1021/acsnano.2c07240
Popis:	We demonstrate DNA translocations through silicon nitride pores formed by simple chemical etching on glass substrates using microscopic amounts of hydrofluoric acid. DNA translocations and transmission electron microscopy (TEM) prove the fabrication of nanopores and allow their characterization. From ionic measurements on 318 chips, we report the effective pore diameters ranging from zero (pristine membranes) and sub-nm to over 100 nm, within 50 μm diameter membranes. The combination of ionic conductance, DNA current blockades, TEM imaging, and electron energy loss spectroscopy (EELS) provides comprehensive information about the pore area and number, from single to few pores, and pore structure. We also show the formation of thinned membrane regions as precursors of pores. The average pore density, about 5 × 10
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e02ec361718f314022848258ee70232 https://doi.org/10.1021/acsnano.2c07240 Zobrazit plný text záznamu