Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures
| Autor: | A. B. Horsfall, Nicholas G. Wright, E.P. Ramsay, D. T. Clark, R.A.R. Young, Ming Hung Weng, Muhammad Idris, A.E. Murphy, H.K. Chan |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
business.industry Chemistry Doping Dangling bond Oxide General Physics and Astronomy Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Effective nuclear charge law.invention Threshold voltage Capacitor chemistry.chemical_compound Semiconductor law Gate oxide 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of applied physics, 2016, Vol.120(21), pp.214902 [Peer Reviewed Journal] |
| Popis: | In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance–voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm−3) or near interface traps at the interface of the gate oxide and the semiconductor (1012–1013 cm−2 eV−1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures. |
| Databáze: | OpenAIRE |
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