Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices
| Autor: | Badreddine Assouar, Simon Gautier, J.P. Salvestrini, Sidi Ould Saad Hamady, Abdallah Ougazzaden, Tarik Moudakir, Hussein Srour, Ali Ahaitouf, Mustapha Abarkan |
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| Přispěvatelé: | Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de Microbiologie Marine, Université de la Méditerranée - Aix-Marseille 2-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Signaux Systèmes et Composants, Sidi Mohammed Ben Abdellah University, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Université Sidi Mohamed Ben Abdellah (USMBA) |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
010302 applied physics
[PHYS]Physics [physics] Materials science Physics and Astronomy (miscellaneous) business.industry Schottky effect Wide-bandgap semiconductor Photodetector Schottky diode Optical power 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy Cutoff frequency Active layer 0103 physical sciences Optoelectronics 0210 nano-technology business ComputingMilieux_MISCELLANEOUS Dark current |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2011, 99 (22), pp.221101 Applied Physics Letters, 2011, 99 (22), pp.221101. ⟨10.1063/1.3662974⟩ |
| ISSN: | 0003-6951 |
| Popis: | International audience; Large internal gains that can be obtained in wide band gap semiconductors-based (GaN and ZnO types) Schottky and/or metal-semiconductor-metal photodetectors are generally accompanied by large dark current and time response. We show that, using quasi-alloy of BGaN/GaN superlattices as the active layer, the dark current can be lowered while maintaining high internal gain (up to 3 x 10(4)) for optical power in the nW range and low time response (few tens of ns) for optical power in the W range. Furthermore, the boron incorporation allows the tuning of the cutoff wavelength |
| Databáze: | OpenAIRE |
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