Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact
| Autor: | Satoru Okayasu, Noriaki Matsunami, Bun Tsuchiya, Masao Sataka |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Nuclear and High Energy Physics
Technology Materials science Band gap Exciton chemistry.chemical_element lattice disordering Nitride Molecular physics Atomic and Molecular Physics and Optics electronic excitation Ion TK1-9971 Condensed Matter::Materials Science chemistry Sputtering electron–lattice coupling Stopping power (particle radiation) Electrical engineering. Electronics. Nuclear engineering sputtering Tin Excitation |
| Zdroj: | Quantum Beam Science, Vol 5, Iss 30, p 30 (2021) Quantum Beam Science Volume 5 Issue 4 |
| Popis: | It has been known that the modification of non-metallic solid materials (oxides, nitrides, etc.), e.g., the formation of tracks, sputtering representing atomic displacement near the surface and lattice disordering are induced by electronic excitation under high-energy ion impact. We have investigated lattice disordering by the X-ray diffraction (XRD) of SiO2, ZnO, Fe2O3 and TiN films and have also measured the sputtering yields of TiN for a comparison of lattice disordering with sputtering. We find that both the degradation of the XRD intensity per unit ion fluence and the sputtering yields follow the power-law of the electronic stopping power and that these exponents are larger than unity. The exponents for the XRD degradation and sputtering are found to be comparable. These results imply that similar mechanisms are responsible for the lattice disordering and electronic sputtering. A mechanism of electron–lattice coupling, i.e., the energy transfer from the electronic system into the lattice, is discussed based on a crude estimation of atomic displacement due to Coulomb repulsion during the short neutralization time (~fs) in the ionized region. The bandgap scheme or exciton model is examined. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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