Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment

Autor:	Taketomo Sato, Masachika Toguchi, Kazuki Miwa, Michihito Shimauchi, Junichi Motohisa
Rok vydání:	2021
Předmět:	Fabrication Materials science business.industry Doping General Engineering Nanowire General Physics and Astronomy Substrate (electronics) Solution treatment Electrochemial etching Electrochemistry GaN Etching (microfabrication) nanowire Optoelectronics business Layer (electronics)
Zdroj:	Applied Physics Express. 14:111003
ISSN:	1882-0786 1882-0778
Popis:	We attempted to fabricate GaN nanowires by electrodeless photo-assisted electrochemical (PEC) etching and successive alkaline solution treatment. The sample consisting of n(+)-doped and unintentionally doped GaN grown on a GaN substrate was selectively etched using a Ti mask in a mixed solution of K2S2O8 and KOH under UV light radiation. This specific layer structure required a relatively concentrated KOH solution for etching. The PEC etching resulted in the formation of a tapered cone structure of GaN with its top diameter determined by the mask size. Successive KOH treatment after PEC etching yielded GaN nanowires with diameters of about 220 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5647ab94289c3c966ae367300cae9607 https://doi.org/10.35848/1882-0786/ac2d45 Zobrazit plný text záznamu