Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition
| Autor: | E. Rzepka, Vy Yam, Charles Renard, Daniel Bouchier, D. Cammilleri, Y. Zheng, Frédéric Fossard, Mathieu Halbwax |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Leprince-Ringuet (LLR), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2007 |
| Předmět: |
crystal structure
Materials science Reflection high-energy electron diffraction Analytical chemistry chemical vapor deposition processes chemistry.chemical_element Germanium 02 engineering and technology Chemical vapor deposition Epitaxy 01 natural sciences Inorganic Chemistry Vacuum deposition germanium silicon alloys 0103 physical sciences Materials Chemistry [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 010302 applied physics 021001 nanoscience & nanotechnology Condensed Matter Physics Crystallography chemistry Electron diffraction Transmission electron microscopy 0210 nano-technology Layer (electronics) reflection high energy electron diffraction |
| Zdroj: | Journal of Crystal Growth Journal of Crystal Growth, Elsevier, 2007, 308 (1), pp.26-29. ⟨10.1016/j.jcrysgro.2007.07.047⟩ Journal of Crystal Growth, 2007, 308 (1), pp.26-29. ⟨10.1016/j.jcrysgro.2007.07.047⟩ |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2007.07.047 |
| Popis: | International audience; In this work, the growth of germanium by ultrahigh vacuum chemical vapor deposition on a 0.6nm thick SiO2 layer formed on Si(0 0 1) is investigated by in situ reflection high-energy electron diffraction, high-resolution transmission electron microscopy, scanning electron microscopy, X-ray diffraction and micro-Raman spectroscopy. Because Ge does not grow from germane on SiO2, nucleation sites were created by exposure of the surface to SiH4 at 650 degrees C prior to the Ge deposition, which is initiated at 600 degrees C. The first stage of Ge growth proceeds via the formation of dots that exhibit the same crystalline orientation as the Si substrate. They are assumed to grow from small apertures opened in the silica layer due to the reduction of SiO2 by Si. For further deposition time, \1 1 1\- and \1 1 3\-facetted Ge crystals are formed and the growth remains monocrystalline. The so-formed Ge crystals are found to be completely relaxed and contain some emerging defects, identified as stacking faults. No misfit or threading dislocations are observed. Consequently, the interface between Ge and the SiO2 layer remains perfectly sharp and free of defects. This relaxation without misfit dislocation is due to SiO2 layer which acts as a buffer layer that prevents the Si substrate from imposing its lattice parameter on the Ge crystal. (C) 2007 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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