Improvement of the stability and optoelectronic characteristics of molybdenum disulfide thin-film transistors by applying a nitrocellulose passivation layer
| Autor: | Seongin Hong, Sujin Jung, Sunkook Kim, Hyun Jae Kim, Seonghwan Hong, I. Sak Lee, Byung Ha Kang |
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| Rok vydání: | 2020 |
| Předmět: |
lcsh:Computer engineering. Computer hardware
Materials science Passivation Electrical stability lcsh:TK7885-7895 02 engineering and technology 01 natural sciences law.invention chemistry.chemical_compound law 0103 physical sciences General Materials Science passivation Electrical and Electronic Engineering Molybdenum disulfide optoelectronic device 010302 applied physics electrical stability business.industry Transistor 021001 nanoscience & nanotechnology nitrocellulose chemistry Thin-film transistor multilayer mos2 Optoelectronics 0210 nano-technology business Layer (electronics) Nitrocellulose |
| Zdroj: | Journal of Information Display, Vol 21, Iss 2, Pp 123-130 (2020) |
| ISSN: | 2158-1606 1598-0316 |
| DOI: | 10.1080/15980316.2019.1710585 |
| Popis: | Nitrocellulose is proposed as a passivation layer for multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) to improve the stability of the devices. After the devised passivation layer was stacked, the threshold voltage shift of the nitrocellulose-passivated MoS2 TFT after the positive-bias temperature stress tests decreased from 11.43 to 4.80 V. This enhanced stability was the result of the protection of the MoS2 channel from external reactive molecules like H2O, O2, and others in the atmosphere. Not only the stability was improved; the electrical performance was also enhanced. The field effect mobility and on/off ratio increased 1.13 and 3.05 times, respectively, due to the narrowed width of the Schottky barrier from the interfacial dipoles between the nitrocellulose and the MoS2 layers. Additionally, the formation of Mo-N bonding generated deep-level subgap states into the bandgap, which led to a higher probability of photoexcitation. Therefore, the MoS2 TFT with a nitrocellulose passivation layer exhibited 202.35 A/W enhanced photoresponsivity, 1.83 × 103 photosensitivity, and 9.94 × 109 Jones detectivity under 635 nm light at 10 mW/mm2. |
| Databáze: | OpenAIRE |
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