Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
| Autor: | Ori Hazut, Thangavel Subramani, Roie Yerushalmi, Arunava Agarwala, Sharon Waichman |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Silicon
Materials science Surface Properties General Chemical Engineering Nanowire Metal Nanoparticles chemistry.chemical_element Basic Protocol 02 engineering and technology Substrate (electronics) 01 natural sciences General Biochemistry Genetics and Molecular Biology Condensed Matter::Materials Science chemistry.chemical_compound Organophosphorus Compounds Condensed Matter::Superconductivity 0103 physical sciences Physics::Atomic and Molecular Clusters Wafer 010302 applied physics Diphosphonates General Immunology and Microbiology Dopant Nanowires business.industry General Neuroscience Doping Strained silicon 021001 nanoscience & nanotechnology Silicon nitride chemistry Optoelectronics Condensed Matter::Strongly Correlated Electrons Gold 0210 nano-technology business |
| Zdroj: | Journal of Visualized Experiments |
| ISSN: | 1940-087X |
| DOI: | 10.3791/50770 |
| Popis: | Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. |
| Databáze: | OpenAIRE |
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