Atomic Layer Deposition of Rhenium Disulfide
| Autor: | Jyrki Räisänen, Marko Vehkamäki, Miika Mattinen, Markku Leskelä, Mikko Ritala, Kenichiro Mizohata, Kristoffer Meinander, Jani Hämäläinen |
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| Přispěvatelé: | Department of Chemistry, Department of Physics, Mikko Ritala / Principal Investigator, Department |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
TRANSITION-METAL DICHALCOGENIDES
Materials science PHOTODETECTORS 116 Chemical sciences RES2 NANOSHEETS CATALYSTS 02 engineering and technology Chemical vapor deposition 010402 general chemistry 01 natural sciences Focused ion beam 114 Physical sciences Atomic layer deposition 2-METHOXYPHENOL X-ray photoelectron spectroscopy Monolayer General Materials Science Thin film ReS2 business.industry Mechanical Engineering rhenium sulfide transition metal dichalcogenides 021001 nanoscience & nanotechnology 0104 chemical sciences Elastic recoil detection CRYSTALS CHEMICAL-VAPOR-DEPOSITION LARGE-AREA Mechanics of Materials Transmission electron microscopy ALD atomic layer deposition Optoelectronics GROWTH FIELD-EFFECT TRANSISTORS 0210 nano-technology business |
| Popis: | 2D materials research is advancing rapidly as various new “beyond graphene” materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict monolayer thickness requirements. The unique inherent decoupling of monolayers in ReS2 combined with a direct bandgap and highly anisotropic properties makes ReS2 one of the most interesting 2D materials for a plethora of applications. Here, a highly controllable and precise atomic layer deposition (ALD) technique is applied to deposit ReS2 thin films. Film growth is demonstrated on large area (5 cm × 5 cm) substrates at moderate deposition temperatures between 120 and 500 °C, and the films are extensively characterized using field emission scanning electron microscopy/energy‐dispersive X‐ray spectroscopy, X‐ray diffractometry using grazing incidence, atomic force microscopy, focused ion beam/transmission electron microscopy, X‐ray photoelectron spectroscopy, and time‐of‐flight elastic recoil detection analysis techniques. The developed ReS2 ALD process highlights the potential of the material for applications beyond planar structure architectures. The ALD process also offers a route to an upgrade to an industrial scale. |
| Databáze: | OpenAIRE |
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