Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition
| Autor: | Bernard Kippelen, Canek Fuentes-Hernandez, Cheng-Yin Wang, Amir Dindar, Samuel Graham, Ankit Singh, Sangmoo Choi, Minseong Yun |
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| Rok vydání: | 2016 |
| Předmět: |
Electron mobility
Materials science Bilayer Gate dielectric Analytical chemistry Nanotechnology 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Threshold voltage Amorphous solid Atomic layer deposition General Materials Science Field-effect transistor 0210 nano-technology Layer (electronics) |
| Zdroj: | ACS Applied Materials & Interfaces. 8:29872-29876 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.6b10603 |
| Popis: | We report on top-gate OFETs with a bilayer gate dielectric comprising an Al2O3 /HfO2 nanolaminate layer grown by atomic layer deposition and an amorphous fluoro-polymer layer (CYTOP). Top-gate OFETs display average carrier mobility values of 0.9 ± 0.2 cm2/(V s) and threshold voltage values of −1.9 ± 0.5 V and high operational and environmental stability under different environmental conditions such as damp air at 50 °C (80% relative humidity) and prolonged immersion in water at a temperature up to 95 °C. |
| Databáze: | OpenAIRE |
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