| Popis: |
Barium strontium titanate (BSTO) thin films were deposited on Pt(111) by high throughput evaporative physical vapor deposition and then annealed at 650 \ifmmode^\circ\else\textdegree\fi{}C for 30 min under ${\mathrm{N}}_{2}$ atmosphere. Using advanced transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy-loss spectroscopy, we directly show that not only does N substitute for O in the BSTO lattice but that it also compensates for $\mathrm{T}{\mathrm{i}}^{3+}$ ions, suppressing conductivity, thereby reducing dielectric loss and enhancing dielectric tunability. However, this effect is negated near the film edge where we speculate that exposed Pt acts as a reservoir of adsorbed/absorbed O and alters the local ${\mathrm{N}}_{2}$ concentration during annealing. |
