Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers

Autor: Stacia Keller, Ryan C. White, Cheyenne Lynsky, Hongjian Li, Matthew S. Wong, Shuji Nakamura, Michel Khoury, Michael Iza, David Sotta, Steven P. DenBaars
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Crystals, Vol 11, Iss 1168, p 1168 (2021)
Crystals; Volume 11; Issue 10; Pages: 1168
ISSN: 2073-4352
Popis: We examine full InGaN-based microLEDs on c-plane semi-relaxed InGaN substrates grown by metal organic chemical vapor deposition (MOCVD) that operate across a wide range of emission wavelengths covering nearly the entire visible spectrum. By employing a periodic InGaN base layer structure with high temperature (HT) GaN interlayers on these semi-relaxed substrates, we demonstrate robust μLED devices. A broad range of emission wavelengths ranging from cyan to deep red are realized, leveraging the indium incorporation benefit of the relaxed InGaN substrate with an enlarged lattice parameter. Since a broad range of emission wavelengths can be realized, this base layer scheme allows the tailoring of the emission wavelength to a particular application, including the possibility for nitride LEDs to emit over the entire visible light spectrum. The range of emission possibilities from blue to red makes the relaxed substrate and periodic base layer scheme an attractive platform to unify the visible emission spectra under one singular material system using III-Nitride MOCVD.
Databáze: OpenAIRE