Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers
Autor: | Stacia Keller, Ryan C. White, Cheyenne Lynsky, Hongjian Li, Matthew S. Wong, Shuji Nakamura, Michel Khoury, Michael Iza, David Sotta, Steven P. DenBaars |
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Jazyk: | angličtina |
Rok vydání: | 2021 |
Předmět: |
Materials science
long-wavelength General Chemical Engineering leakage chemistry.chemical_element Substrate (electronics) Nitride law.invention Inorganic Chemistry law relaxed General Materials Science microLED Emission spectrum Metalorganic vapour phase epitaxy device Crystallography business.industry MOCVD electrical Condensed Matter Physics chemistry QD901-999 Optoelectronics business Layer (electronics) Indium Light-emitting diode Visible spectrum |
Zdroj: | Crystals, Vol 11, Iss 1168, p 1168 (2021) Crystals; Volume 11; Issue 10; Pages: 1168 |
ISSN: | 2073-4352 |
Popis: | We examine full InGaN-based microLEDs on c-plane semi-relaxed InGaN substrates grown by metal organic chemical vapor deposition (MOCVD) that operate across a wide range of emission wavelengths covering nearly the entire visible spectrum. By employing a periodic InGaN base layer structure with high temperature (HT) GaN interlayers on these semi-relaxed substrates, we demonstrate robust μLED devices. A broad range of emission wavelengths ranging from cyan to deep red are realized, leveraging the indium incorporation benefit of the relaxed InGaN substrate with an enlarged lattice parameter. Since a broad range of emission wavelengths can be realized, this base layer scheme allows the tailoring of the emission wavelength to a particular application, including the possibility for nitride LEDs to emit over the entire visible light spectrum. The range of emission possibilities from blue to red makes the relaxed substrate and periodic base layer scheme an attractive platform to unify the visible emission spectra under one singular material system using III-Nitride MOCVD. |
Databáze: | OpenAIRE |
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