| Autor: |
Masaru Ogura, Hiroshi Takahashi, Hidetoshi Nagamoto, Junichiro Otomo, Ching-ju Wen, Shuqiang Wang |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
Solid State Ionics. 176:755-760 |
| ISSN: |
0167-2738 |
| DOI: |
10.1016/j.ssi.2004.10.013 |
| Popis: |
Microstructures and conductivity characteristics were investigated in proton-conducting CsHSO 4 –SiO 2 composite electrolyte membranes prepared by CsHSO 4 melt infiltration into porous SiO 2 membranes with average pore sizes of 290 and 4 nm, respectively. XRD and TG-DTA analyses revealed that the pore-filled CsHSO 4 proton-conducting phases in the nanocomposite electrolyte with the 290-nm SiO 2 pores consisted of two crystallized CsHSO 4 bulk phases and an amorphous CsHSO 4 interface phase. For the electrolyte with 4-nm SiO 2 pores, however, only the amorphous CsHSO 4 interface phase dispersed with CsHSO 4 crystallites was present in the nanocomposite. AC impedance measurements indicated that the proton-conducting characteristic of the nanocomposite with the 290-nm SiO 2 membrane pores was similar to that of the pure CsHSO 4 electrolyte, whereas the nanocomposite with 4-nm pores exhibited a high-temperature CsHSO 4 proton-conducting characteristic across the entire testing temperature range, from nearly room temperature up to 200 °C, thus showing a significant enhancement in low-temperature conductivity vs. the pure CsHSO 4 electrolyte—by two to three orders of magnitude. Moreover, the amorphous CsHSO 4 interface phase in the nanocomposite with the 4-nm SiO 2 pores was demonstrated to be stable even after having been kept at 40 °C for 1 week. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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