Influence of Calcination Temperature on Crystal Growth and Optical Characteristics of Eu3+ Doped ZnO/Zn2SiO4 Composites Fabricated via Simple Thermal Treatment Method
| Autor: | Sidek Hj Ab Aziz, Yuji Iwamoto, Suhail Huzaifa Jaafar, Khamirul Amin Matori, Mohd Hafiz Mohd Zaid, Sawao Honda, Halimah Mohamed Kamari |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Photoluminescence
Materials science Band gap General Chemical Engineering Crystal growth 02 engineering and technology Thermal treatment 01 natural sciences law.invention Inorganic Chemistry Crystal law 0103 physical sciences lcsh:QD901-999 europium ion General Materials Science Calcination composite Composite material Absorption (electromagnetic radiation) 010302 applied physics Doping 021001 nanoscience & nanotechnology Condensed Matter Physics ZnO lcsh:Crystallography 0210 nano-technology Zn2SiO4 thermal treatment |
| Zdroj: | Crystals Volume 11 Issue 2 Crystals, Vol 11, Iss 115, p 115 (2021) |
| ISSN: | 2073-4352 |
| DOI: | 10.3390/cryst11020115 |
| Popis: | This research paper proposes the usage of a simple thermal treatment method to synthesis the pure and Eu3+ doped ZnO/Zn2SiO4 based composites which undergo calcination process at different temperatures. The effect of calcination temperatures on the structural, morphological, and optical properties of ZnO/Zn2SiO4 based composites have been studied. The XRD analysis shows the existence of two major phases which are ZnO and Zn2SiO4 crystals and supported by the finding in the FT-IR. The FESEM micrograph further confirms the existence of both ZnO and Zn2SiO4 crystal phases, with progress in the calcination temperature around 700&ndash 800 ° C which affects the existence of the necking-like shape particle. Absorption humps discovered through UV-Vis spectroscopy revealed that at the higher calcination temperature effects for higher absorption intensity while absorption bands can be seen at below 400 nm with dropping of absorption bands at 370&ndash 375 nm. Two types of band gap can be seen from the energy band gap analysis which occurs from ZnO crystal and Zn2SiO4 crystal progress. It is also discovered that for Eu3+ doped ZnO/Zn2SiO4 composites, the Zn2SiO4 crystal (5.11&ndash 4.71 eV) has a higher band gap compared to the ZnO crystal (3.271&ndash 4.07 eV). While, for the photoluminescence study, excited at 400 nm, the emission spectra of Eu3+ doped ZnO/Zn2SiO4 revealed higher emission intensity compared to pure ZnO/Zn2SiO4 with higher calcination temperature exhibit higher emission intensity at 615 nm with 700 ° C being the optimum temperature. The emission spectra also show that the calcination temperature contributed to enhancing the emission intensity. |
| Databáze: | OpenAIRE |
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