2-volt Solution-Processed, Indium Oxide (In2 O3) Thin Film Transistors on flexible Kapton
| Autor: | Donald Lupo, Sagar R. Bhalerao, Paul R. Berger |
|---|---|
| Přispěvatelé: | Tampere University, Electrical Engineering, Research group: Laboratory for Future Electronics |
| Rok vydání: | 2019 |
| Předmět: |
Electron mobility
Materials science business.industry 213 Electronic automation and communications engineering electronics Transconductance chemistry.chemical_element Semiconductor device Flexible electronics Threshold voltage chemistry Thin-film transistor Saturation (graph theory) Optoelectronics business Indium |
| Zdroj: | 2019 IEEE International Flexible Electronics Technology Conference (IFETC). |
| DOI: | 10.1109/ifetc46817.2019.9073721 |
| Popis: | Semiconductor devices based upon silicon have powered the modern electronics revolution through advanced manufacturing processes. However, the requirement of high temperatures to create crystalline silicon devices has restricted its use in a number of new applications, such as printed and flexible electronics. Thus, developments with high mobility solution-processable metal oxides, surpassing $\alpha$-Si in many instances, is opening a new era for flexible and wearable electronics. However, high operating voltages and relatively high deposition temperatures required for metal oxides remain impediments for the flexible devices. Here, the fabrication of low operating voltage, flexible thin film transistors (TFT) using a solution processed indium oxide In 2 O 3 ) channel material with room temperature deposited anodized high-κ aluminum oxide (Al 2 O 3 ) for gate dielectrics are reported. The flexible TFTs operates at low voltage V ds of 2 V, with threshold voltage V th 0.42 V, on/off ratio 103 and subthreshold swing (SS) 420 mV/dec. The electron mobility $(\mu)$, extracted from the saturation regime, is 2.85 cm2 /V.s and transconductance, gm, is $38 {\mu} \mathrm{S}$. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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