Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
| Autor: | Boning Ding, M. Quinn, Stephen Church, Martin Frentrup, David J. Binks, K. Cooley-Greene, Rachel A. Oliver, Abhiram Gundimeda, David J. Wallis, Menno J. Kappers |
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| Přispěvatelé: | Church, SA [0000-0002-0413-7050], Quinn, M [0000-0001-6810-0815], Ding, B [0000-0003-2868-3416], Gundimeda, A [0000-0001-5208-1920], Wallis, DJ [0000-0002-0475-7583], Oliver, RA [0000-0003-0029-3993], Binks, DJ [0000-0002-9102-0941], Apollo - University of Cambridge Repository |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science ResearchInstitutes_Networks_Beacons/photon_science_institute General Physics and Astronomy Thermionic emission Heterojunction 02 engineering and technology Photon Science Institute 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics 5108 Quantum Physics Crystal Phase (matter) 0103 physical sciences Spontaneous emission 0210 nano-technology 51 Physical Sciences Quantum well Wurtzite crystal structure |
| Zdroj: | Church, S, Quinn, M, Cooley-Greene, K, Ding, B, Gundimeda, A, Kappers, M J, Frentrup, M, Wallis, D, Binks, D & Oliver, R A 2021, ' Photoluminescence efficiency of zincblende InGaN/GaN quantum wells ', Journal of Applied Physics, vol. 129, 175702 . https://doi.org/10.1063/5.0046649 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/5.0046649 |
| Popis: | Growing green and amber emitting InGaN/GaN quantum wells in the zincblende, rather than the wurtzite,crystal phase has the potential to improve efficiency. However, optimisation of the emission efficiency of theseheterostructures is still required to compete with more conventional alternatives. Photoluminescence timedecays were used to assess how the quantum well width and number of quantum wells affect the recombinationrates, and temperature dependent photoluminescence was used to determine the factors affecting recombinationefficiency. The radiative recombination lifetime was found to be approximately 600 ps and to increaseweakly with well width, consistent with a change in the exciton binding energy. The relative efficiency atroom temperature was found to increase by a factor of five when the number of wells was increased fromone to five. Furthermore, the efficiency increased by factor 2.2 when the width was increased from 2:5nmto 7:5nm. These results indicate that thermionic emission is the most important process reducing efficiencyat temperatures in excess of 100 K. Moreover, the weak dependence of the rate of radiative recombinationon well width means that increasing well thickness is an effective way of suppressing thermionic emissionand thereby increasing efficiency in zincblende InGaN/GaN quantum wells, in contrast to those grown in thewurtzite phase. |
| Databáze: | OpenAIRE |
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