A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

Autor:	Dirk Jonker, Erwin J. W. Berenschot, Roald M. Tiggelaar, Niels R. Tas, Arie van Houselt, Han J.G.E. Gardeniers
Přispěvatelé:	Mesoscale Chemical Systems, MESA+ Institute, Physics of Interfaces and Nanomaterials
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	low energy ion beam etching Planarization cold field emitters self-aligned fabrication 22/4 OA procedure
Zdroj:	35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022, 561-564 STARTPAGE=561;ENDPAGE=564;TITLE=35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022
ISSN:	2160-1968
DOI:	10.1109/mems51670.2022.9699565
Popis:	A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::455f81b15f0b755992193720105b6c28 https://doi.org/10.1109/mems51670.2022.9699565 Zobrazit plný text záznamu