On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
| Autor: | H. Lafontaine, Jean-Guy Tartarin, Thierry Parra, T. Kovacic, J. Kuchenbecker, Robert Plana, J. Graffeuil, Mattia Borgarino |
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| Rok vydání: | 2000 |
| Předmět: |
reliability
Materials science Silicon SiGe business.industry hot carrier stress heterojunction bipolar transistor scattering parameters Heterojunction bipolar transistor Bipolar junction transistor Transistor General Engineering General Physics and Astronomy chemistry.chemical_element Biasing Heterojunction BiCMOS law.invention chemistry law Optoelectronics business Voltage |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1051-8207 |
| DOI: | 10.1109/75.888834 |
| Popis: | This work for the first time experimentally investigates the hot carrier effects on the RF characteristics (up to 30 GHz) of Si/SiGe heterojunction bipolar transistors (HBT's). Reverse base-emitter voltage stresses were applied at room temperature on BiCMOS compatible, sub-micron transistors. The main observed degradation is a decrease of S/sub 21/. It was found that this degradation is minimized (maximized) when biasing at constant collector (base) current. These results may be valuable indications also for degradations induced by ionizing radiations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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