Low-loss coupling interfaces between InP-based emitters and Si3N4 photonic integrated circuits
| Autor: | Dimitra Ketzaki, Dimitrios Chatzitheocharis, Konstantinos Vyrsokinos, George Dabos |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Coupling
Fabrication Silicon photonics Materials science Silicon business.industry Photonic integrated circuit chemistry.chemical_element 02 engineering and technology Laser 01 natural sciences law.invention 010309 optics 020210 optoelectronics & photonics chemistry law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics business Waveguide Flip chip |
| Zdroj: | Silicon Photonics XIV |
| DOI: | 10.1117/12.2508517 |
| Popis: | Silicon photonics technology has emerged as a viable solution for the demonstration of highly functional Photonic Integrated Circuits (PICs) relying on the mixture of light sources with silicon based waveguides. However, the incorporation of the laser sources in all PICs has always been at the center of industrial and research attention. To date, the vast majority of such merging schemes focus on either flip chip bonding of external III-V dies or hybrid-integration techniques that feature very good optical performance at the expense of fabrication cost. The next evolution of PICs, however will rely on the monolithic integration of the III-V lasers on the silicon substrates for simultaneous optimization of cost and circuit performance. In this work two low-loss coupling interface schemes are presented for efficient light transition between monolithically integrated InP-based laser sources and a Si3N4 passive circuitry through an intermediate waveguiding layer. For both coupling interface schemes, the light is butt-coupled from the III-V source into an intermediate waveguide that in turn couples the light into the final Si3N4 waveguide platform utilizing an evanescent coupling scheme. Two approaches are investigated towards this direction: The first approach is based on a purely stoichiometric Si3N4 waveguide, while the second one is based on a Si-Rich Nitride (SRN) acting as the intermediate layer. In both cases 2D-FDTD simulations verified by 3D-FDTD simulation results reveal total transition losses of less than 1.7dB for the pure-Si3N4 and less than 1dB for the SRN approach. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|