| Autor: |
Whelan, C.S., Marsh, P.F., Lardizabal, S.M., Hoke, W.E., McTaggart, R.A., Kazior, T.E. |
| Jazyk: |
italština |
| Rok vydání: |
2000 |
| Předmět: |
|
| Zdroj: |
Whelan, C.S. ; Marsh, P.F. ; Lardizabal, S.M. ; Hoke, W.E. ; McTaggart, R.A. ; Kazior, T.E. (2000) Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris. |
| Popis: |
Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, and the device and amplifier performance of metamorphic HEMTs with 30% to 60% indium channel content, with a focus on work done at Raytheon RF Components. 1.4W of output power at 44 GHz have been realized. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
