Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
| Autor: | Benoit Bertrand, John J. L. Morton, Virginia N. Ciriano-Tejel, Michael A. Fogarty, Lisa Ibberson, Maud Vinet, M. Fernando Gonzalez-Zalba, Yann-Michel Niquet, Jing Li, Simon Schaal, Louis Hutin |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Silicon
Physics::Instrumentation and Detectors chemistry.chemical_element FOS: Physical sciences 02 engineering and technology Spin dependent tunneling 01 natural sciences 7. Clean energy Computer Science::Emerging Technologies 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Hardware_INTEGRATEDCIRCUITS Hardware_ARITHMETICANDLOGICSTRUCTURES 010306 general physics Spin (physics) Reflectometry General Environmental Science Physics Quantum Physics Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics General Engineering 021001 nanoscience & nanotechnology Computer Science::Other chemistry CMOS Quantum dot Qubit General Earth and Planetary Sciences 0210 nano-technology Quantum Physics (quant-ph) |
| Popis: | Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures. 8 pages, 4 figures, 57 cites. v3: added acknowledges |
| Databáze: | OpenAIRE |
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