The boron effect on low temperature luminescence of SrAl2O4:Eu, Dy
| Autor: | Krisjanis Smits, Virginija Vitola, Aleksejs Zolotarjovs, Ivita Bite, Katrīna Laganovska, Agnese Spustaka, Donats Millers |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Persistent luminescence Analytical chemistry chemistry.chemical_element 02 engineering and technology Trapping 7. Clean energy 01 natural sciences 0103 physical sciences Materials Chemistry NATURAL SCIENCES:Physics [Research Subject Categories] Boron Quantum tunnelling 010302 applied physics Long afterglow Process Chemistry and Technology 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Afterglow Boron concentration chemistry Ceramics and Composites 0210 nano-technology Luminescence Intensity (heat transfer) |
| Zdroj: | Ceramics International |
| Popis: | V.V. acknowledges the financial support of ERDF PostDoc project No. 1.1.1.2/VIAA/3/19/440 (University of Latvia Institute of Solid State Physics, Latvia) and K.S., I.B., A.Z., D.M. and K.L. acknowledge the financial support of ERDF, European-Union Project No. 1.1.1.1/16/A/182 (University of Latvia Institute of Solid State Physics, Latvia). Temperature dependence of the afterglow of persistent luminescence material SrAl2O4:Eu,Dy is a major problem for outdoor low temperature applications. Therefore this publication deals with tailoring the material for better outdoor use by exploring the second mechanism, that is involved in the afterglow – charge tunnelling from the trapping center to the luminescence center. Structure, morphology, emission and thermally stimulated luminescence properties have been measured for SrAl2O4:Eu,Dy samples with different added boron percentage. The results indicate a change in morphology of the samples with increasing boron concentration, as well as a change in afterglow times. The low temperature luminescence intensity and afterglow time dependence of boron addition turns out to be different from the room temperature luminescence intensity and afterglow time dependence from boron concentration. Boron addition in necessary amount plays a key role to creating trapping centers in the material that are located spatially close to the luminescence center thus making the material afterglow possible even in low temperatures. ERDF PostDoc project No. 1.1.1.2/VIAA/3/19/440; ERDF 1.1.1.1/16/A/182; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART² |
| Databáze: | OpenAIRE |
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