Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors

Autor: Abdelkader Souifi, Djeffal Faycal, Rechem Djamil, Khial Aicha
Přispěvatelé: INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Dept Elect, LEA, Université Hadj Lakhdar Batna 1, Inl, Laboratoire INL UMR5270
Jazyk: angličtina
Rok vydání: 2017
Předmět:
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics]
Materials science
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic
Annealing (metallurgy)
Band gap
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Analytical chemistry
02 engineering and technology
[SPI.MAT] Engineering Sciences [physics]/Materials
medicine.disease_cause
01 natural sciences
[PHYS] Physics [physics]
[SPI.MAT]Engineering Sciences [physics]/Materials
0103 physical sciences
Materials Chemistry
medicine
Thin film
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Sol-gel
010302 applied physics
Photocurrent
[PHYS]Physics [physics]
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
business.industry
Metals and Alloys
Surfaces and Interfaces
021001 nanoscience & nanotechnology
Tin oxide
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
13. Climate action
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
0210 nano-technology
business
Ultraviolet
Dark current
Zdroj: Thin Solid Films
Thin Solid Films, Elsevier, 2017, 623, pp.1
ISSN: 0040-6090
Popis: International audience; Tin oxide SnO2 thin films were deposited by sol gel method on glass substrates. The as-deposited thin films were then annealed at 550 °C for different time durations (15, 30, 60 and 120 min). Structural and morphological investigations were carried out on all samples by X-ray diffraction method and atomic force microscopy while optical properties were obtained with UV–Visible spectrophotometer. XRD patterns reveals that the samples possess polycrystalline with rutile structure of SnO2 without any secondary phase. AFM image showed that SnO2 thin films having a smooth surface morphology. The optical properties in the visible range showed that the deposited layers have a high transmission factor. The optical band gap energy varies in the range of 3.61–3.73 eV. Finally, ultraviolet (UV) detection properties of samples as an active layer in UV photodetector devices were investigated. Current-voltage characteristics of the SnO2 thin films are performed under dark and light environment, which show low dark current of 22.9 nA with a linear behavior and high current ration > 104 under 2 V applied voltage and 120 min as annealing time. Whereas, high photocurrent is observed for samples annealing for 30 min. Moreover, the transient photoresponse of the fabricated device is reported under different annealing times.
Databáze: OpenAIRE
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