A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

Autor:	Kwang Ho Ahn, Young-hoon Cho, Seongun Shin, Woo Young Chung, Woo Young Choi, Gyuhan Yoon
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	leakage current dynamic random-access memory storage capacitor Computer science lcsh:Mechanical engineering and machinery 02 engineering and technology 01 natural sciences Article law.invention technology-computer-aided design Reliability (semiconductor) law Hardware_GENERAL 0103 physical sciences lcsh:TJ1-1570 Electrical and Electronic Engineering 010302 applied physics Hardware_MEMORYSTRUCTURES reliability Dielectric strength Mechanical Engineering 021001 nanoscience & nanotechnology Reliability engineering Capacitor Control and Systems Engineering 0210 nano-technology Technology CAD Dram time-dependent dielectric breakdown
Zdroj:	Micromachines Volume 10 Issue 4 Micromachines, Vol 10, Iss 4, p 256 (2019)
ISSN:	2072-666X
DOI:	10.3390/mi10040256
Popis:	A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40f15f80c17cf1323ec787696862cd14 Zobrazit plný text záznamu