Fabrication of halfmicron MOSFETs by means of X-ray lithography
| Autor: | F. Bauer, H. L. Huber, P. Balk, V. Lauer, J. Korec |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 1987 |
| Předmět: |
Materials science
Fabrication business.industry mask technology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Röntgenlithographie MOSFET x-ray Maskentechnologie Optoelectronics lithography X-ray lithography Electrical and Electronic Engineering business Lithography |
| Popis: | MOSFETs with effective channel lengths down to 0.3 μm have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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