Simulation of cryogenic silicon etching under SF 6 /O 2 /Ar plasma discharge
| Autor: | F. Roqueta, A. Mokrani, Yehya Haidar, Amand Pateau, Ahmed Rhallabi, F. Taher, Mohamed Boufnichel |
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| Přispěvatelé: | Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), STMicroelectronics, STMicroelectronics [Crolles] (ST-CROLLES) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Passivation Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology 01 natural sciences 7. Clean energy Etching (microfabrication) 0103 physical sciences Reactive-ion etching ComputingMilieux_MISCELLANEOUS 010302 applied physics Plasma etching business.industry fungi Direct current technology industry and agriculture Surfaces and Interfaces Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics Inductively coupled plasma 0210 nano-technology business |
| Zdroj: | Journal of Vacuum Science and Technology A Journal of Vacuum Science and Technology A, American Vacuum Society, 2016, 34 (6), ⟨10.1116/1.4966606⟩ |
| ISSN: | 0734-2101 |
| Popis: | An etching simulator is developed to study the two-dimensional (2D) silicon etch profile evolution under SF6/O2 inductively coupled plasma discharge. The simulator is composed of three modules: plasma kinetic module, sheath module, and etching module. With this approach, the authors can predict the 2D etch profile evolution versus reactor parameters. Simulation results from the sheath model show that the shape of the bimodal ion energy distribution function for each incident angle depends on the ion mass. It is all the larger that the ion mass is low. As shown in the experiment, the simulation results reveal that the atomic oxygen plays an important role in the passivation process along the side-wall. Indeed, the simulation results show the decrease of the undercut when the %O2 increases. This improves the etching anisotropy. However, the decrease in the etch rate is observed for a high %O2. Moreover, for a moderate direct current (DC) bias (some 10 V), a low variation of the silicon etch profile versus D... |
| Databáze: | OpenAIRE |
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