Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Autor: Marwa Ben Arbia, Badreddine Smiri, Ilkay Demir, Faouzi Saidi, Ismail Altuntas, Fredj Hassen, Hassen Maaref
Přispěvatelé: Eğitim Bilimleri Enstitüsü, Laboratoire de Micro-optoélectronique et Nanostructures [Monastir], Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Fédération de recherche « Matière et interactions » (FeRMI), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Cumhuriyet University [Sivas, Turkey], Institut Supérieur des Sciences Appliquées et de Technologie de Sousse (ISSATS), Université de Sousse
Rok vydání: 2022
Předmět:
Zdroj: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, 2022, 140, pp.106411. ⟨10.1016/j.mssp.2021.106411⟩
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2021.106411⟩
Popis: The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for Infrared optoelectronic devices. In this work, the temperature dependent photoluminescence (TDPL) analysis of In-rich InxGa1����� xAs (x = 0.65: S1, x = 0.661: S2, and x = 0.667 S3) samples is of the central focus. The S-shaped behavior recorded at low temperature range in the III-V ternary is quantitatively studied herein by Localized State Ensemble (LSE) model. A comparison between the semi-empirical evolution of luminescence versus temperature and our numerical simulation proves the adequacy of computational details, used in LSE model, in well reproducing the S-shape feature. The numerical simulation well matched with PL spectra proving that the localization phenomenon is stronger when increasing the Indium mole fraction. The clustering effect in In-rich structure seems to be beneficial for enhancing the carrier localization within InxGa1����� xAs by localizing carriers from away extended defects that behave probably as non-radiative centers. This is indicative of the utmost importance of localization phenomenon in trapping carriers within localized states instead of dislocations and defects, owing to clustering of indium atoms.
Databáze: OpenAIRE
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