Fabrication of Microbolometer Arrays Based on Polymorphous Silicon–Germanium
| Autor: | Eduardo Cano, Mario Moreno, Daniel Ferrusca, Ricardo Jiménez, Alfonso Torres, Jose de Jesus Rangel-Magdaleno, Arturo Ponce, J. Castro-Ramos, Julio Noel Hernandez-Perez, Alfredo Morales |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Germanium 02 engineering and technology Chemical vapor deposition array lcsh:Chemical technology 01 natural sciences Biochemistry Article microbolometer Analytical Chemistry chemistry.chemical_compound Plasma-enhanced chemical vapor deposition sensor 0103 physical sciences lcsh:TP1-1185 plasma-enhanced chemical vapor deposition Electrical and Electronic Engineering Instrumentation 010302 applied physics business.industry silicon Microbolometer 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Silicon-germanium germanium Semiconductor chemistry infrared Optoelectronics polymorphous 0210 nano-technology business Temperature coefficient |
| Zdroj: | Sensors (Basel, Switzerland) Sensors, Vol 20, Iss 2716, p 2716 (2020) Sensors Volume 20 Issue 9 |
| ISSN: | 1424-8220 |
| Popis: | This work reports the development of arrays of infrared sensors (microbolometers) using a hydrogenated polymorphous silicon&ndash germanium alloy (pm-SixGe1-x:H). Basically, polymorphous semiconductors consist of an amorphous semiconductor matrix with embedded nanocrystals of about 2&ndash 3 nm. The pm-SixGe1-x:H alloy studied has a high temperature coefficient of resistance (TCR) of 4.08%/K and conductivity of 1.5 × 10&minus 5 S∙cm&minus 1. Deposition of thermosensing film was made by plasma-enhanced chemical vapor deposition (PECVD) at 200 ° C, while the area of the devices is 50 × 50 &mu m2 with a fill factor of 81%. Finally, an array of 19 × 20 microbolometers was packaged for electrical characterization. Voltage responsivity values were obtained in the range of 4 × 104 V/W and detectivity around 2 × 107 cm∙Hz1/2/W with a polarization current of 70 &mu A at a chopper frequency of 30 Hz. A minimum value of 2 × 10 W/Hz1/2 noise equivalent power was obtained at room temperature. In addition, it was found that all the tested devices responded to incident infrared radiation, proving that the structure and mechanical stability are excellent. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|