Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures
| Autor: | Karl-Heinz Heinig, J. Wosnitza, Marc Uhlarz, R. Skrotzki, A. Mücklich, W. Skorupa, M. Voelskow, H. Reuther, T. Herrmannsdörfer, Manfred Helm, C. Wündisch, O. Ignatchik, Bernd Schmidt, V. Heera, Matthias Posselt |
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| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Superconductivity
Materials science Condensed matter physics business.industry Annealing (metallurgy) Doping General Physics and Astronomy chemistry.chemical_element Germanium Condensed Matter::Materials Science Semiconductor chemistry Condensed Matter::Superconductivity Gallium business Ambient pressure |
| Zdroj: | Physical Review Letters 102(2009), 217003 |
| Popis: | We demonstrate that the third elemental group-IV semiconductor, germanium, exhibits superconductivity at ambient pressure. Using advanced doping and annealing techniques of state-of-the-art semiconductor processing, we have fabricated a highly Ga-doped Ge (GeratioGa) layer in near-intrinsic Ge. Depending on the detailed annealing conditions, we demonstrate that superconductivity can be generated and tailored in the doped semiconducting Ge host at temperatures as high as 0.5 K. Critical-field measurements reveal the quasi-two-dimensional character of superconductivity in the approximately 60 nm thick GeratioGa layer. The Cooper-pair density in GeratioGa appears to be exceptionally low. |
| Databáze: | OpenAIRE |
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