A Bilayer 2D-WS2/Organic-Based Heterojunction for High-Performance Photodetectors

Autor: Siwei Zhang, Jing Zhou Li, Shi-Xi Zhao, Ri Peng Luo, Yan Fei Lv, Wei Tao Su, Wen-Di Li, Yuan Liu, Peng Bo Nie, Fei Yu Kang, Feng Huang, Zhu Hua Xu, Shi Chao Zhao, Hao Chung Kuo, Guo Dan Wei
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Nanomaterials
Volume 9
Issue 9
Nanomaterials, Vol 9, Iss 9, p 1312 (2019)
ISSN: 2079-4991
DOI: 10.3390/nano9091312
Popis: Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2 domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS2/organic semiconductor materials (mixture of the (Poly-(N, N'-bis-4-butylphenyl-N, N'-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS2 domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS2 and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 ×
1011 Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.
Databáze: OpenAIRE