| Autor: |
Tatsuro Endo, Tsutomu Minegishi, Soraya Shizumi, Masakazu Sugiyama |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
The Journal of Physical Chemistry Letters. 13:3978-3982 |
| ISSN: |
1948-7185 |
| DOI: |
10.1021/acs.jpclett.2c00766 |
| Popis: |
An n-type GaN epitaxial thin film surface modified with a cocatalyst, Pt comb, showed photocatalytic evolution of hydrogen from water under irradiation. Direct measurement of electrochemical potentials of the n-type GaN layer and Pt comb revealed that the potentials of Pt comb were well matched with that of an n-type GaN layer, indicating that the n-type GaN-Pt interface behaved as an Ohmic contact during the reaction. However, the interface behaves as a Schottky contact in air. Newly developed in situ current-voltage ( |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
