Reactive ion etching of deeply etched DBR-structures with reduced air-gaps for highly reflective monolithically integrated laser mirrors

Autor: K. Avary, F. Klopf, S. Rennon, Alfred Forchel, Johann Peter Reithmaier
Rok vydání: 2001
Předmět:
Zdroj: Scopus-Elsevier
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(01)00491-9
Popis: An electron cyclotron resonance reactive ion etching process is investigated for the fabrication of third order deeply etched distributed Bragg reflectors suitable for monolithically integrated laser mirrors. At a period of 550-nm, air-gaps as small as 150 nm down to a depth of 4.5 μm were realized in AlGaAs/GaAs heterostructures. The reflectivity of the deeply etched DBRs was tested by the device properties of microlasers with a cleaved facet on one side and a DBR on the other side. From the light output characteristic of the lasers a systematic improvement of the mirror reflectivity is observed by reducing the air-gap.
Databáze: OpenAIRE